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Part Number :HN1A01FE-GR,LF
Manufacturer :Toshiba Electronic Devices and Storage Corporation
Description :HN1A01FE-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle :New from this manufacturer
Delivery :DHL、UPS、FedEx、Registered Mail
Payment :T/T Paypal Visa MoneyGram Western Union
More Information :HN1A01FE-GR,LF More Information
ECAD :Request Free CAD Models
Pricing(USD) :$0.06
Remark :Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount :Surface Mount
Polarity :PNP
Number of Pins :6
Max Breakdown Voltage :50 V
Max Power Dissipation :100 mW
Emitter Base Voltage (VEBO) :-5 V
Collector Base Voltage (VCBO) :-50 V
Collector Emitter Breakdown Voltage :50 V
Products Category :Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty :2065 In Stock
Applications :Test & measurement
Data storage
Wired networking
hFE Min :120
Packaging :Tape & Reel (TR)
Transition Frequency :80 MHz
Max Collector Current :150 mA
Gain Bandwidth Product :80 MHz
Continuous Collector Current :-150 mA
Collector Emitter Voltage (VCEO) :300 mV
Collector Emitter Saturation Voltage :-300 mV
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