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Part Number :BFP843H6327XTSA1
Manufacturer :IR (Infineon Technologies)
Description :BFP843H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle :New from this manufacturer
Delivery :DHL、UPS、FedEx、Registered Mail
Payment :T/T Paypal Visa MoneyGram Western Union
More Information :BFP843H6327XTSA1 More Information
ECAD :Request Free CAD Models
Pricing(USD) :$0.51
Remark :Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Gain :24.5 dB
Polarity :NPN
Power Gain :22.5 dB
Noise Figure :0.95 dB
Package Quantity :3000
Max Collector Current :55 mA
Max Operating Temperature :150 °C
Collector Base Voltage (VCBO) :2.9 V
Collector Emitter Breakdown Voltage :2.25 V
Products Category :Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty :408 In Stock
Applications :Connected peripherals & printers
Aerospace & defense
Mount :Surface Mount
Packaging :Tape & Reel
Case/Package :SOT
Contact Plating :Tin
Max Breakdown Voltage :2.25 V
Max Power Dissipation :125 mW
Min Operating Temperature :-55 °C
Collector Emitter Voltage (VCEO) :2.25 V
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